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1
GATE ECE 2024
MCQ (Single Correct Answer)
+1
-0.33

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature ($T$) dependence of free electron concentration ($n$)?

A
GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 3 English Option 1
B
GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 3 English Option 2
C
GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 3 English Option 3
D
GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 3 English Option 4
2
GATE ECE 2024
MCQ (More than One Correct Answer)
+1
-0.33

The free electron concentration profile $n(x)$ in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three different positions. Which of the following statements is/are true?

GATE ECE 2024 Electronic Devices and VLSI - Semiconductor Physics Question 2 English
A

For $x$ between B and C, the electron diffusion current is directed from C to B.

B

For $x$ between B and A, the electron drift current is directed from B to A.

C

For $x$ between B and C, the electric field is directed from B to C.

D

For $x$ between B and A, the electric field is directed from A to B.

3
GATE ECE 2023
MCQ (Single Correct Answer)
+1
-0.33

In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as

A
degenerate n-type.
B
degenerate p-type.
C
non-degenerate n-type.
D
non-degenerate p-type.
4
GATE ECE 2023
MCQ (Single Correct Answer)
+1
-0.33

For an intrinsic semiconductor at temperature $$T=0K$$, which of the following statement is true?

A
All energy states in the valence band are filled with electrons and all energy states in the conduction band are empty of electrons.
B
All energy states in the valence band are empty of electrons and all energy states in the conduction band are filled with electrons.
C
All energy states in the valence and conduction band are filled with holes.
D
All energy states in the valence and conduction band are filled with electrons.
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GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Network Theory
Network Elements Network Theorems Transient Response Sinusoidal Steady State Response Two Port Networks Network Graphs State Equations For Networks Miscellaneous
Control Systems
Signal Flow Graph and Block Diagram Time Response Analysis Compensators Basic of Control Systems Frequency Response Analysis Stability Root Locus Diagram State Space Analysis
Digital Circuits
Logic Gates Boolean Algebra Analog to Digital and Digital to Analog Converters Sequential Circuits Combinational Circuits Logic Families Number System and Code Convertions Semiconductor Memories
General Aptitude
Numerical Ability Logical Reasoning Verbal Ability
Electronic Devices and VLSI
PN Junction Semiconductor Physics IC Basics and MOSFET BJT and FET
Analog Circuits
Diodes Bipolar Junction Transistor Frequency Response FET and MOSFET Oscillators Operational Amplifier Feedback Amplifier Power Amplifier 555 Timer
Engineering Mathematics
Linear Algebra Calculus Vector Calculus Complex Variable Probability and Statistics Differential Equations Numerical Methods Transform Theory
Microprocessors
Instruction Set and Programming with 8085 Pin Details of 8085 and Interfacing with 8085
Communications
Analog Communication Systems Digital Communication Systems Random Signals and Noise Fundamentals of Information Theory Noise In Digital Communication
Electromagnetics
Maxwell Equations Transmission Lines Uniform Plane Waves Waveguides Antennas Miscellaneous
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