The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap E_g= 1.1 eV is ________.

A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to

At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant D_p in cm²/s is__________.

Drift current in the semiconductors depends upon