1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The probability that an electron in a metal occupies the Fermi-level at any
temperature (> 0 K)
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$.
If the
intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is
4
GATE ECE 1994
True or False
+1
-0
A p-type silicon sample has a higher conductivity compared to an n-type sample
having the same dopant concentration.
Questions Asked from Semiconductor Physics (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2022 (3)
GATE ECE 2017 Set 1 (1)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (2)
GATE ECE 2015 Set 1 (1)
GATE ECE 2014 Set 4 (2)
GATE ECE 2014 Set 3 (2)
GATE ECE 2011 (1)
GATE ECE 2008 (1)
GATE ECE 2006 (2)
GATE ECE 2005 (3)
GATE ECE 2004 (1)
GATE ECE 2003 (1)
GATE ECE 2002 (2)
GATE ECE 1997 (1)
GATE ECE 1995 (3)
GATE ECE 1994 (2)
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
Electromagnetics
General Aptitude