1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 27 English
A
Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor
B
Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor
C
Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor
D
Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor
2
GATE ECE 2015 Set 2
Numerical
+1
-0
An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 $$\mathrm\mu$$s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is __________________
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3
GATE ECE 2015 Set 2
Numerical
+1
-0
A piece of silicon is doped uniformly with phosphorous with a doping concentration of $$10^{16}/cm^2$$. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$. The conductivity (in S cm-1) of the silicon sample at 300 K is _________________. GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 28 English
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4
GATE ECE 2015 Set 1
Numerical
+1
-0
A silicon sample is uniformly doped with donor type impurities with a concentration of $$10^{16}/cm^3$$.The electron and hole mobilities in the sample are $$1200\;cm^2/V-s$$ and $$400\;cm^2/V-s$$ respectively. Assume complete ionization of impurities. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$.The resistivity of the sample $$\left(in\;\Omega-cm\right)$$ is _____________.
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