1
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
The impurity commonly used for realizing the base region of a silicon n-p-n transistor is
A
Gallium
B
Indium
C
Boron
D
Phosphorus
2
GATE ECE 2003
MCQ (Single Correct Answer)
+1
-0.3
n-type silicon is obtained by doping silicon with
A
Germanium
B
Aluminum
C
Boron
D
Phosphorus
3
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
The band gap of silicon at 300 K is
A
1.36 eV
B
1.10 eV
C
0.80 eV
D
0.67 eV
4
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
The intrinsic carrier concentration of silicon sample at 300oK is $$1.5\times10^{16}/m^3$$. If after doping, the number of majority carriers is $$5\times10^{20}/m^3$$ , minority carrier density is
A
$$4.50\times10^{11}/m^3$$
B
$$3.33\times10^4/m^3$$
C
$$5.00\times10^{20}/m^3$$
D
$$3.00\times10^{-5}/m^3$$
GATE ECE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
CBSE
Class 12