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GATE ECE 2014 Set 3
Numerical
+1
-0
At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant Dp in cm2/s is__________.
Your input ____
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
Drift current in the semiconductors depends upon
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is true?
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GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
Under low level injection assumption, the injected minority carrier current for an
extrinsic semiconductor is essentially the
GATE ECE Subjects
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Network Theory
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Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Representation of Continuous Time Signal Fourier Series Transmission of Signal Through Continuous Time LTI Systems Miscellaneous Sampling Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Discrete Time Signal Z Transform Transmission of Signal Through Discrete Time Lti Systems
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