1
GATE ECE 2014 Set 3
Numerical
+1
-0
At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant Dp in cm2/s is__________.
Your input ____
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
Drift current in the semiconductors depends upon
A
only the electric field
B
only the carrier concentration gradient
C
both the electric field and the carrier concentration
D
both the electric field and the carrier concentration gradient
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is true?
A
A silicon wafer heavily doped with boron is a p+ substrate
B
A silicon wafer lightly doped with boron is a p+ substrate
C
A silicon wafer heavily doped with arsenic is a p+ substrate
D
A silicon wafer lightly doped with arsenic is a p+ substrate
4
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the
A
diffusion current
B
drift current
C
recombination current
D
induced current
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