1
GATE ECE 2014 Set 3
Numerical
+1
-0
At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant Dp in cm2/s is__________.
Your input ____
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
Drift current in the semiconductors depends upon
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is true?
4
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
Under low level injection assumption, the injected minority carrier current for an
extrinsic semiconductor is essentially the
Questions Asked from Semiconductor Physics (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2024 (2)
GATE ECE 2023 (2)
GATE ECE 2022 (2)
GATE ECE 2017 Set 1 (1)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (2)
GATE ECE 2015 Set 1 (1)
GATE ECE 2014 Set 4 (2)
GATE ECE 2014 Set 3 (2)
GATE ECE 2011 (1)
GATE ECE 2008 (1)
GATE ECE 2006 (2)
GATE ECE 2005 (3)
GATE ECE 2004 (1)
GATE ECE 2003 (1)
GATE ECE 2002 (2)
GATE ECE 1997 (1)
GATE ECE 1995 (3)
GATE ECE 1994 (2)
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics