1
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the
A
diffusion current
B
drift current
C
recombination current
D
induced current
2
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:
A
directly proportional to the doping concentration
B
inversely proportional to the doping concentration
C
directly proportional to the intrinsic concentration
D
inversely proportional to the intrinsic concentration
3
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The primary reason for the widespread use of Silicon in semiconductor device technology is
A
abundance of Silicon on the surface of the Earth.
B
larger bandgap of Silicon in comparison to Germanium.
C
favorable properties of Silicon-dioxide (SiO2)
D
lower melting point
4
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A Silicon PN junction at a temperature of 20°C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias is approximately
A
20 pA
B
30 pA
C
40 pA
D
80 pA
GATE ECE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12