1
GATE ECE 2003
MCQ (Single Correct Answer)
+1
-0.3
n-type silicon is obtained by doping silicon with
2
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
The intrinsic carrier concentration of silicon sample at 300oK is $$1.5\times10^{16}/m^3$$. If after doping, the number of majority carriers is $$5\times10^{20}/m^3$$ , minority carrier density is
3
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
The band gap of silicon at 300 K is
4
GATE ECE 1997
MCQ (Single Correct Answer)
+1
-0.3
The units of $$\frac q{KT}$$ are
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Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Representation of Continuous Time Signal Fourier Series Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Continuous Time Linear Invariant System Discrete Time Signal Z Transform Sampling
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