1
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The primary reason for the widespread use of Silicon in semiconductor device
technology is
2
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A Silicon PN junction at a temperature of 20°C has a reverse saturation current of
10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias
is approximately
3
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The band gap of Silicon at room temperature is:
4
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
The impurity commonly used for realizing the base region of a silicon n-p-n
transistor is
Questions Asked from Semiconductor Physics (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2024 (2)
GATE ECE 2023 (2)
GATE ECE 2022 (3)
GATE ECE 2017 Set 1 (1)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (2)
GATE ECE 2015 Set 1 (1)
GATE ECE 2014 Set 4 (2)
GATE ECE 2014 Set 3 (2)
GATE ECE 2011 (1)
GATE ECE 2008 (1)
GATE ECE 2006 (2)
GATE ECE 2005 (3)
GATE ECE 2004 (1)
GATE ECE 2003 (1)
GATE ECE 2002 (2)
GATE ECE 1997 (1)
GATE ECE 1995 (3)
GATE ECE 1994 (2)
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
Electromagnetics
General Aptitude