1
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The primary reason for the widespread use of Silicon in semiconductor device technology is
A
abundance of Silicon on the surface of the Earth.
B
larger bandgap of Silicon in comparison to Germanium.
C
favorable properties of Silicon-dioxide (SiO2)
D
lower melting point
2
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A Silicon PN junction at a temperature of 20°C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias is approximately
A
20 pA
B
30 pA
C
40 pA
D
80 pA
3
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The band gap of Silicon at room temperature is:
A
1.3 eV
B
0.7 eV
C
1.1 eV
D
1.4 eV
4
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
The impurity commonly used for realizing the base region of a silicon n-p-n transistor is
A
Gallium
B
Indium
C
Boron
D
Phosphorus
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