1

GATE ECE 2015 Set 2

Numerical

+1

-0

An n–type silicon sample is uniformly illuminated with light which generates 10

^{20}electron hole pairs per cm^{3}per second. The minority carrier lifetime in the sample is 1 $$\mathrm\mu$$s.In the steady state, the hole concentration in the sample is approximately 10^{x}, where x is an integer. The value of x is __________________Your input ____

2

GATE ECE 2015 Set 2

Numerical

+1

-0

A piece of silicon is doped uniformly with phosphorous with a doping concentration of
$$10^{16}/cm^2$$. The expected value of mobility versus doping concentration for silicon assuming
full dopant ionization is shown below. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$.
The
conductivity
(in S cm

^{-1}) of the silicon sample at 300 K is _________________.Your input ____

3

GATE ECE 2015 Set 1

Numerical

+1

-0

A silicon sample is uniformly doped with donor type impurities with a concentration of $$10^{16}/cm^3$$.The electron and hole mobilities in the sample are
$$1200\;cm^2/V-s$$ and $$400\;cm^2/V-s$$ respectively. Assume complete ionization of impurities.
The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$.The resistivity of the sample
$$\left(in\;\Omega-cm\right)$$ is _____________.

Your input ____

4

GATE ECE 2014 Set 4

MCQ (Single Correct Answer)

+1

-0.3

In the figure ln(ρ

_{i}) is plotted as a function of 1/T, where ρ_{i}the intrinsic resistivity of silicon, T is is the temperature, and the plot is almost linear.The slope of the line can be used to estimate

Questions Asked from Semiconductor Physics (Marks 1)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE 2022 (3)
GATE ECE 2017 Set 1 (1)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (2)
GATE ECE 2015 Set 1 (1)
GATE ECE 2014 Set 4 (2)
GATE ECE 2014 Set 3 (2)
GATE ECE 2011 (1)
GATE ECE 2008 (1)
GATE ECE 2006 (2)
GATE ECE 2005 (3)
GATE ECE 2004 (1)
GATE ECE 2003 (1)
GATE ECE 2002 (2)
GATE ECE 1997 (1)
GATE ECE 1995 (3)
GATE ECE 1994 (2)

GATE ECE Subjects

Network Theory

Control Systems

Electronic Devices and VLSI

Analog Circuits

Digital Circuits

Microprocessors

Signals and Systems

Representation of Continuous Time Signal Fourier Series
Discrete Time Signal Fourier Series Fourier Transform
Discrete Time Signal Z Transform
Continuous Time Linear Invariant System
Transmission of Signal Through Continuous Time LTI Systems
Discrete Time Linear Time Invariant Systems
Sampling
Continuous Time Signal Laplace Transform
Discrete Fourier Transform and Fast Fourier Transform
Transmission of Signal Through Discrete Time Lti Systems
Miscellaneous
Fourier Transform

Communications

Electromagnetics

General Aptitude