GATE ECE 2022 | Semiconductor Physics Question 9 | Electronic Devices and VLSI

GATE ECE 2022

MCQ (Single Correct Answer)

-0.33

In a non-degenerate bulk semiconductor with electron density n = 10¹⁶ cm^$$-$$3, the value of E_C $$-$$ E_Fn = 200 meV, where E_C and E_Fn denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10¹⁰ cm^$$-$$3. For n = 0.5 $$\times$$ 10¹⁶ cm^$$-$$3, the closest approximation of the value of (E_C $$-$$ E_Fn), among the given options is _________.

226 meV

174 meV

218 meV

182 meV

GATE ECE 2017 Set 1

MCQ (Single Correct Answer)

-0.3

A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statement is true?

Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites

Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites

Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

-0.3

A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 27 English

GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 27 English

Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor

GATE ECE 2015 Set 2

Numerical

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A piece of silicon is doped uniformly with phosphorous with a doping concentration of $$10^{16}/cm^2$$. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$. The conductivity (in S cm^-1) of the silicon sample at 300 K is _________________. GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 28 English