GATE ECE 2022 | Semiconductor Physics Question 2 | Electronic Devices and VLSI

GATE ECE 2022

MCQ (Single Correct Answer)

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In a non-degenerate bulk semiconductor with electron density n = 10¹⁶ cm^$$-$$3, the value of E_C $$-$$ E_Fn = 200 meV, where E_C and E_Fn denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10¹⁰ cm^$$-$$3. For n = 0.5 $$\times$$ 10¹⁶ cm^$$-$$3, the closest approximation of the value of (E_C $$-$$ E_Fn), among the given options is _________.

226 meV

174 meV

218 meV

182 meV

GATE ECE 2022

MCQ (More than One Correct Answer)

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Select the CORRECT statements regarding semiconductor devices

Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium.

Collector region is generally more heavily doped than Base region in a BJT.

Total current is spatially constant in a two terminal electronic device in dark under steady state condition.

Mobility of electrons always increases with temperature in Silicon beyond 300 K.

GATE ECE 2017 Set 1

MCQ (Single Correct Answer)

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A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statement is true?

Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites

Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites

Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

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A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 20 English