In a non-degenerate bulk semiconductor with electron density n = 10¹⁶ cm^$$-$$3, the value of E_C $$-$$ E_Fn = 200 meV, where E_C and E_Fn denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10¹⁰ cm^$$-$$3. For n = 0.5 $$\times$$ 10¹⁶ cm^$$-$$3, the closest approximation of the value of (E_C $$-$$ E_Fn), among the given options is _________.

A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV . The intrinsic Fermi level is shifted from midbandgap energy level by