1
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+1
-0.3
In the figure ln(ρi) is plotted as a function of 1/T, where ρi the intrinsic resistivity of silicon, T is is the temperature, and the plot is almost linear. GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 25 English

The slope of the line can be used to estimate

A
Band gap energy of silicon (Eg)
B
Sum of electron and hole mobility in silicon $$\left(\mu_n+\mu_p\right)$$
C
Reciprocal of the sum of electron and hole mobility in silicon $$\left(\mu_n+\mu_p\right)^{-1}$$
D
Intrinsic carrier concentration of silicon (ni)
2
GATE ECE 2014 Set 4
Numerical
+1
-0
The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap Eg= 1.1 eV is ________.
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3
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to
A
The minority carrier mobility
B
The minority carrier recombination lifetime
C
The majority carrier concentration
D
The excess minority carrier concentration
4
GATE ECE 2014 Set 3
Numerical
+1
-0
At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant Dp in cm2/s is__________.
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