GATE ECE 2020 | Semiconductor Physics Question 17 | Electronic Devices and VLSI

GATE ECE 2020

MCQ (Single Correct Answer)

-0.33

A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV . The intrinsic Fermi level is shifted from midbandgap energy level by

9.01 meV

13.45 meV

18.02 meV

26.90 meV

GATE ECE 2017 Set 1

MCQ (Single Correct Answer)

-0.3

A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statement is true?

Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites

Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites

Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

-0.3

A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 34 English

GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 34 English

Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor

GATE ECE 2015 Set 1

Numerical

-0

A silicon sample is uniformly doped with donor type impurities with a concentration of $$10^{16}/cm^3$$.The electron and hole mobilities in the sample are $$1200\;cm^2/V-s$$ and $$400\;cm^2/V-s$$ respectively. Assume complete ionization of impurities. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$.The resistivity of the sample $$\left(in\;\Omega-cm\right)$$ is _____________.

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