1

GATE ECE 1995

MCQ (Single Correct Answer)

+1

-0.3

The drift velocity of electrons in silicon

2

GATE ECE 1995

MCQ (Single Correct Answer)

+1

-0.3

In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$.
If the
intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is

3

GATE ECE 1994

True or False

+1

-0

A p-type silicon sample has a higher conductivity compared to an n-type sample
having the same dopant concentration.

4

GATE ECE 1994

MCQ (Single Correct Answer)

+1

-0.3

A small concentration of minority carries is injected into a homogeneous
semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 $$\mu$$ sec. The mobility (in cm

^{2}/volt-sec) will beQuestions Asked from Semiconductor Physics (Marks 1)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE 2022 (3)
GATE ECE 2017 Set 1 (1)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (2)
GATE ECE 2015 Set 1 (1)
GATE ECE 2014 Set 4 (2)
GATE ECE 2014 Set 3 (2)
GATE ECE 2011 (1)
GATE ECE 2008 (1)
GATE ECE 2006 (2)
GATE ECE 2005 (3)
GATE ECE 2004 (1)
GATE ECE 2003 (1)
GATE ECE 2002 (2)
GATE ECE 1997 (1)
GATE ECE 1995 (3)
GATE ECE 1994 (2)

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics