1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
2
GATE ECE 1994
True or False
+1
-0
A p-type silicon sample has a higher conductivity compared to an n-type sample
having the same dopant concentration.
3
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
A small concentration of minority carries is injected into a homogeneous
semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 $$\mu$$ sec. The mobility (in cm2/volt-sec) will be
Questions Asked from Semiconductor Physics (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2025 (1)
GATE ECE 2024 (2)
GATE ECE 2023 (2)
GATE ECE 2022 (2)
GATE ECE 2017 Set 1 (1)
GATE ECE 2016 Set 1 (1)
GATE ECE 2015 Set 2 (2)
GATE ECE 2015 Set 1 (1)
GATE ECE 2014 Set 4 (2)
GATE ECE 2014 Set 3 (2)
GATE ECE 2011 (1)
GATE ECE 2008 (1)
GATE ECE 2006 (2)
GATE ECE 2005 (3)
GATE ECE 2004 (1)
GATE ECE 2003 (1)
GATE ECE 2002 (2)
GATE ECE 1997 (1)
GATE ECE 1995 (3)
GATE ECE 1994 (2)
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Communications
Electromagnetics
General Aptitude