1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The probability that an electron in a metal occupies the Fermi-level at any
temperature (> 0 K)
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$.
If the
intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is
4
GATE ECE 1994
True or False
+1
-0
A p-type silicon sample has a higher conductivity compared to an n-type sample
having the same dopant concentration.
GATE ECE Subjects
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Control Systems
Engineering Mathematics
Analog Circuits
Network Theory
Electromagnetics
Electronic Devices and VLSI
Digital Circuits
Microprocessors
Signals and Systems
Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Representation of Continuous Time Signal Fourier Series Transmission of Signal Through Continuous Time LTI Systems Miscellaneous Sampling Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Discrete Time Signal Z Transform Transmission of Signal Through Discrete Time Lti Systems
Communications
General Aptitude