1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 46 English
A
0 V
B
$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$
C
Switching threshold of inverter
D
VDD
2
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation
3
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
A
Isolation oxide growth
B
Channel stop implantation
C
Poly-silicon gate patterning
D
Lithography step leading to the contact pads
4
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
GATE ECE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12