1
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
2
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
3
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
If fixed positive charges are present in the gate oxide of an n-channel enhancement type
MOSFET, it will lead to
4
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the ac equivalent circuit shown in the figure, if in is the input current and RF is very large, the type of feedback
Questions Asked from IC Basics and MOSFET (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2023 (1)
GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 3 (1)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 1 (2)
GATE ECE 2015 Set 3 (1)
GATE ECE 2014 Set 3 (1)
GATE ECE 2014 Set 2 (1)
GATE ECE 2014 Set 1 (3)
GATE ECE 2013 (2)
GATE ECE 2012 (1)
GATE ECE 2011 (1)
GATE ECE 2008 (2)
GATE ECE 2005 (1)
GATE ECE 2004 (1)
GATE ECE 1994 (1)
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Communications
Electromagnetics
General Aptitude