1

GATE ECE 2011

MCQ (Single Correct Answer)

+1

-0.3

In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the
threshold voltage V

_{T}= 1 V. The voltage V_{x}at the source of the upper transistor is2

GATE ECE 2008

MCQ (Single Correct Answer)

+1

-0.3

The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K'
is a constant. The magnitude of the transconductance g

_{m}is3

GATE ECE 2008

MCQ (Single Correct Answer)

+1

-0.3

A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a
temperature above 1000ºC for further oxidation in dry oxygen. The oxidation
rate

4

GATE ECE 2005

MCQ (Single Correct Answer)

+1

-0.3

A MOS capacitor made using p-type substrate is in the accumulation mode. The
dominant charge in the channel is due to the presence of

Questions Asked from IC Basics and MOSFET (Marks 1)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 3 (1)
GATE ECE 2016 Set 1 (2)
GATE ECE 2015 Set 3 (1)
GATE ECE 2014 Set 3 (1)
GATE ECE 2014 Set 2 (1)
GATE ECE 2014 Set 1 (3)
GATE ECE 2013 (2)
GATE ECE 2012 (1)
GATE ECE 2011 (1)
GATE ECE 2008 (2)
GATE ECE 2005 (1)
GATE ECE 2004 (1)
GATE ECE 1994 (1)

GATE ECE Subjects

Network Theory

Control Systems

Electronic Devices and VLSI

Analog Circuits

Digital Circuits

Microprocessors

Signals and Systems

Representation of Continuous Time Signal Fourier Series
Discrete Time Signal Fourier Series Fourier Transform
Discrete Time Signal Z Transform
Continuous Time Linear Invariant System
Transmission of Signal Through Continuous Time LTI Systems
Discrete Time Linear Time Invariant Systems
Sampling
Continuous Time Signal Laplace Transform
Discrete Fourier Transform and Fast Fourier Transform
Transmission of Signal Through Discrete Time Lti Systems
Miscellaneous
Fourier Transform

Communications

Electromagnetics

General Aptitude