In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the threshold voltage V_T = 1 V. The voltage V_x at the source of the upper transistor is

The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance g_m is

A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate

A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of