Transistor geometries in a CMOS inverter have been adjusted to meet the requirement for worst case charge and discharge times for driving a load capacitor C. This design is to be converted to that of a NOR circuit in the same technology, so that its worst case charge and discharge times while driving the same capacitor are similar. The channel lengths of all transistors are to be kept unchanged. Which one of the following statements is correct?

Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):

P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?

What is the voltage V_out in the following circuit?

Which one of the following processes is preferred to from the gate dielectric (SiO₂) of MOSFETs?