1
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of 1 V. Ignoring the body-effect, the output voltages at P, Q and R are, GATE ECE 2014 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 54 English
A
4 V, 3 V, 2 V
B
5 V, 5 V, 5 V
C
4 V, 4 V, 4 V
D
5 V, 4 V, 3 V
2
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
A
Isolation oxide growth
B
Channel stop implantation
C
Poly-silicon gate patterning
D
Lithography step leading to the contact pads
3
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
4
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a MOSFET operating in the saturation region, the channel length modulation effect causes
A
an increase in the gate-source capacitance
B
a decrease in the Transconductance
C
a decrease in the unity-gain cutoff frequency
D
a decrease in the output resistance
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