GATE ECE 2005 | IC Basics and MOSFET Question 58 | Electronic Devices and VLSI

GATE ECE 2005

MCQ (Single Correct Answer)

-0.3

A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of

holes

electrons

positively charged ions

negatively charged ions

GATE ECE 2004

MCQ (Single Correct Answer)

-0.3

Consider the following statements S1 and S2.

S1: The threshold voltage (V_T) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?

S1 is FALSE and S2 is TRUE

both S1 and S2 are TRUE

S1 is TRUE and S2 is FALSE

both S1 and S2 are FALSE

GATE ECE 1994

MCQ (Single Correct Answer)

-0.3

The threshold voltage of an n-channel MOSFET can be increased by

increasing the channel dopant concentration

reducing the channel dopant concentration

reducing the gate-oxide thickness

reducing the channel length

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Stability Frequency Response Analysis Compensators State Space Analysis Root Locus Diagram Signal Flow Graph and Block Diagram Time Response Analysis Basic of Control Systems

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Probability and Statistics Linear Algebra Complex Variable Transform Theory Vector Calculus Differential Equations Calculus Numerical Methods

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