1

GATE ECE 2005

MCQ (Single Correct Answer)

+1

-0.3

A MOS capacitor made using p-type substrate is in the accumulation mode. The
dominant charge in the channel is due to the presence of

2

GATE ECE 2004

MCQ (Single Correct Answer)

+1

-0.3

Consider the following statements S1 and S2.

S1: The threshold voltage (V_{T}) of a MOS capacitor decreases with increase in gate
oxide thickness

S2: The threshold voltage (V_{T}) of a MOS capacitor decreases with increase in
substrate doping concentration.

3

GATE ECE 1994

MCQ (Single Correct Answer)

+1

-0.3

The threshold voltage of an n-channel MOSFET can be increased by

Questions Asked from IC Basics and MOSFET (Marks 1)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 3 (1)
GATE ECE 2016 Set 1 (2)
GATE ECE 2015 Set 3 (1)
GATE ECE 2014 Set 3 (1)
GATE ECE 2014 Set 2 (1)
GATE ECE 2014 Set 1 (3)
GATE ECE 2013 (2)
GATE ECE 2012 (1)
GATE ECE 2011 (1)
GATE ECE 2008 (2)
GATE ECE 2005 (1)
GATE ECE 2004 (1)
GATE ECE 1994 (1)

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics