1
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of
A
holes
B
electrons
C
positively charged ions
D
negatively charged ions
2
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements S1 and S2.


S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?
A
S1 is FALSE and S2 is TRUE
B
both S1 and S2 are TRUE
C
S1 is TRUE and S2 is FALSE
D
both S1 and S2 are FALSE
3
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
The threshold voltage of an n-channel MOSFET can be increased by
A
increasing the channel dopant concentration
B
reducing the channel dopant concentration
C
reducing the gate-oxide thickness
D
reducing the channel length
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