1
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
A
a decrease in the threshold voltage
B
channel length modulation
C
an increase in substrate leakage current
D
an increase in accumulation capacitance
2
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of 1 V. Ignoring the body-effect, the output voltages at P, Q and R are, GATE ECE 2014 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 54 English
A
4 V, 3 V, 2 V
B
5 V, 5 V, 5 V
C
4 V, 4 V, 4 V
D
5 V, 4 V, 3 V
3
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a MOSFET operating in the saturation region, the channel length modulation effect causes
A
an increase in the gate-source capacitance
B
a decrease in the Transconductance
C
a decrease in the unity-gain cutoff frequency
D
a decrease in the output resistance
4
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
A
superior quality oxide with a higher growth rate
B
inferior quality oxide with a higher growth rate
C
inferior quality oxide with a lower growth rate
D
superior quality oxide with a lower growth rate
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