1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements for a metal oxide semiconductor field effect transistor
(MOSFET):
P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.
2
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit?
3
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of
MOSFETs?
4
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
Questions Asked from IC Basics and MOSFET (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 3 (1)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 1 (2)
GATE ECE 2015 Set 3 (1)
GATE ECE 2014 Set 3 (1)
GATE ECE 2014 Set 2 (1)
GATE ECE 2014 Set 1 (3)
GATE ECE 2013 (2)
GATE ECE 2012 (1)
GATE ECE 2011 (1)
GATE ECE 2008 (2)
GATE ECE 2005 (1)
GATE ECE 2004 (1)
GATE ECE 1994 (1)
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics