1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):


P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?
A
P and Q
B
P and S
C
Q and R
D
R and S
2
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 49 English
A
0 V
B
$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$
C
Switching threshold of inverter
D
VDD
3
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation
4
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
A
a decrease in the threshold voltage
B
channel length modulation
C
an increase in substrate leakage current
D
an increase in accumulation capacitance
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