1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements for a metal oxide semiconductor field effect transistor
(MOSFET):
P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.
2
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit?
3
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of
MOSFETs?
4
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
GATE ECE Subjects
Browse all chapters by subject
Control Systems
Engineering Mathematics
Analog Circuits
Network Theory
Electromagnetics
Electronic Devices and VLSI
Digital Circuits
Microprocessors
Signals and Systems
Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Representation of Continuous Time Signal Fourier Series Transmission of Signal Through Continuous Time LTI Systems Miscellaneous Sampling Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Discrete Time Signal Z Transform Transmission of Signal Through Discrete Time Lti Systems
Communications
General Aptitude