1
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the
threshold voltage VT = 1 V. The voltage Vx at the source of the upper transistor is
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a
temperature above 1000ºC for further oxidation in dry oxygen. The oxidation
rate
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K'
is a constant. The magnitude of the transconductance gm is
Questions Asked from IC Basics and MOSFET (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2023 (1)
GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 1 (2)
GATE ECE 2016 Set 3 (1)
GATE ECE 2015 Set 3 (1)
GATE ECE 2014 Set 3 (1)
GATE ECE 2014 Set 2 (1)
GATE ECE 2014 Set 1 (3)
GATE ECE 2013 (2)
GATE ECE 2012 (1)
GATE ECE 2011 (1)
GATE ECE 2008 (2)
GATE ECE 2005 (1)
GATE ECE 2004 (1)
GATE ECE 1994 (1)
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics