1
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the
threshold voltage VT = 1 V. The voltage Vx at the source of the upper transistor is


3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a
temperature above 1000ºC for further oxidation in dry oxygen. The oxidation
rate
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K'
is a constant. The magnitude of the transconductance gm is
GATE ECE Subjects
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General Aptitude
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Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Representation of Continuous Time Signal Fourier Series Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Continuous Time Linear Invariant System Discrete Time Signal Z Transform Sampling
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