1
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 56 English
A
$$Y=\overline A\;\overline B\;+\;\overline C$$
B
$$Y=\left(A+B\right)C$$
C
$$Y=\left(\overline A+\overline B\right)\overline C$$
D
$$Y=AB+C$$
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the threshold voltage VT = 1 V. The voltage Vx at the source of the upper transistor is GATE ECE 2011 Electronic Devices and VLSI - IC Basics and MOSFET Question 57 English
A
1 V
B
2 V
C
3 V
D
3.67 V
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
GATE ECE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12