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1
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 60 English
A
$$Y=\overline A\;\overline B\;+\;\overline C$$
B
$$Y=\left(A+B\right)C$$
C
$$Y=\left(\overline A+\overline B\right)\overline C$$
D
$$Y=AB+C$$
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the threshold voltage VT = 1 V. The voltage Vx at the source of the upper transistor is GATE ECE 2011 Electronic Devices and VLSI - IC Basics and MOSFET Question 61 English
A
1 V
B
2 V
C
3 V
D
3.67 V
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
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Control Systems
Time Response Analysis Signal Flow Graph and Block Diagram State Space Analysis Basic of Control Systems Compensators Root Locus Diagram Stability Frequency Response Analysis
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Probability and Statistics Linear Algebra Complex Variable Transform Theory Vector Calculus Differential Equations Calculus Numerical Methods
Analog Circuits
Frequency Response Operational Amplifier Power Amplifier Diodes Oscillators Feedback Amplifier 555 Timer Bipolar Junction Transistor FET and MOSFET
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Network Elements State Equations For Networks Network Graphs Miscellaneous Sinusoidal Steady State Response Network Theorems Two Port Networks Transient Response
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Maxwell Equations Transmission Lines Uniform Plane Waves Antennas Waveguides Miscellaneous
Electronic Devices and VLSI
IC Basics and MOSFET PN Junction BJT and FET Semiconductor Physics
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Logic Families Analog to Digital and Digital to Analog Converters Boolean Algebra Semiconductor Memories Number System and Code Convertions Logic Gates Combinational Circuits Sequential Circuits
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Instruction Set and Programming with 8085 Pin Details of 8085 and Interfacing with 8085
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Fundamentals of Information Theory Noise In Digital Communication Digital Communication Systems Random Signals and Noise Analog Communication Systems
General Aptitude
Verbal Ability Logical Reasoning Numerical Ability
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