1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K'
is a constant. The magnitude of the transconductance gm is
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a
temperature above 1000ºC for further oxidation in dry oxygen. The oxidation
rate
3
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A MOS capacitor made using p-type substrate is in the accumulation mode. The
dominant charge in the channel is due to the presence of
4
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements S1 and S2.
S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate
oxide thickness
S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in
substrate doping concentration.
GATE ECE Subjects
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General Aptitude
Network Theory
Microprocessors
Signals and Systems
Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Representation of Continuous Time Signal Fourier Series Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Continuous Time Linear Invariant System Discrete Time Signal Z Transform Sampling
Electromagnetics
Digital Circuits
Electronic Devices and VLSI
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Engineering Mathematics