1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
3
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of
A
holes
B
electrons
C
positively charged ions
D
negatively charged ions
4
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements S1 and S2.


S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?
A
S1 is FALSE and S2 is TRUE
B
both S1 and S2 are TRUE
C
S1 is TRUE and S2 is FALSE
D
both S1 and S2 are FALSE
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