1
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
2
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
A
Isolation oxide growth
B
Channel stop implantation
C
Poly-silicon gate patterning
D
Lithography step leading to the contact pads
3
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
A
superior quality oxide with a higher growth rate
B
inferior quality oxide with a higher growth rate
C
inferior quality oxide with a lower growth rate
D
superior quality oxide with a lower growth rate
4
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a MOSFET operating in the saturation region, the channel length modulation effect causes
A
an increase in the gate-source capacitance
B
a decrease in the Transconductance
C
a decrease in the unity-gain cutoff frequency
D
a decrease in the output resistance

GATE ECE Subjects

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