1
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
2
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
A
superior quality oxide with a higher growth rate
B
inferior quality oxide with a higher growth rate
C
inferior quality oxide with a lower growth rate
D
superior quality oxide with a lower growth rate
3
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a MOSFET operating in the saturation region, the channel length modulation effect causes
A
an increase in the gate-source capacitance
B
a decrease in the Transconductance
C
a decrease in the unity-gain cutoff frequency
D
a decrease in the output resistance
4
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 59 English
A
$$Y=\overline A\;\overline B\;+\;\overline C$$
B
$$Y=\left(A+B\right)C$$
C
$$Y=\left(\overline A+\overline B\right)\overline C$$
D
$$Y=AB+C$$
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