1
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
2
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
A
a decrease in the threshold voltage
B
channel length modulation
C
an increase in substrate leakage current
D
an increase in accumulation capacitance
3
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the ac equivalent circuit shown in the figure, if in is the input current and RF is very large, the type of feedback GATE ECE 2014 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 52 English
A
voltage-voltage feedback
B
voltage-current feedback
C
current-voltage feedback
D
current-current feedback
4
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of 1 V. Ignoring the body-effect, the output voltages at P, Q and R are, GATE ECE 2014 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 51 English
A
4 V, 3 V, 2 V
B
5 V, 5 V, 5 V
C
4 V, 4 V, 4 V
D
5 V, 4 V, 3 V
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