GATE ECE 2017 Set 2 | IC Basics and MOSFET Question 7 | Electronic Devices and VLSI

GATE ECE 2017 Set 2

MCQ (Single Correct Answer)

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An n-channel enhancement mode MOSFET is biased at V_GS > V_TH and V_DS > (V_GS - V_TH), where V_GS is the gate-to-source voltage, V_DS is the drain-to-source voltage and V_TH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a

voltage source with zero output impedance

voltage source with non-zero output impedance

current source with finite output impedance

current source with infinite output impedance

GATE ECE 2016 Set 2

MCQ (Single Correct Answer)

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Transistor geometries in a CMOS inverter have been adjusted to meet the requirement for worst case charge and discharge times for driving a load capacitor C. This design is to be converted to that of a NOR circuit in the same technology, so that its worst case charge and discharge times while driving the same capacitor are similar. The channel lengths of all transistors are to be kept unchanged. Which one of the following statements is correct? GATE ECE 2016 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 47 English

GATE ECE 2016 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 47 English

Widths of PMOS transistors should be doubled, while widths of NMOS transistors should be halved.

Widths of PMOS transistors should be doubled, while widths of NMOS transistors should not be changed.

Widths of PMOS transistors should be halved, while widths of NMOS transistors should not be changed.

Widths of PMOS transistors should be unchanged, while widths of NMOS transistors should be halved.

GATE ECE 2016 Set 2

MCQ (Single Correct Answer)

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A long-channel NMOS transistor is biased in the linear region with V_DS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?

If the device width W is increased, the resistance decreases.

If the threshold voltage is reduced, the resistance decreases.

If the device length L is increased, the resistance increases.

If V_GS is increased, the resistance increases.

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

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Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):

P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?

P and Q

P and S

Q and R

R and S

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