1
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation
2
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
A
Isolation oxide growth
B
Channel stop implantation
C
Poly-silicon gate patterning
D
Lithography step leading to the contact pads
3
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
4
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
A
a decrease in the threshold voltage
B
channel length modulation
C
an increase in substrate leakage current
D
an increase in accumulation capacitance
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Graduate Aptitude Test in Engineering
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