1
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+1
-0.3
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 43 English
A
inversion
B
accumulation
C
depletion
D
flat band
2
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):


P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?
A
P and Q
B
P and S
C
Q and R
D
R and S
3
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 46 English
A
0 V
B
$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$
C
Switching threshold of inverter
D
VDD
4
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation
GATE ECE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
CBSE
Class 12