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1
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a MOSFET operating in the saturation region, the channel length modulation effect causes
A
an increase in the gate-source capacitance
B
a decrease in the Transconductance
C
a decrease in the unity-gain cutoff frequency
D
a decrease in the output resistance
2
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 60 English
A
$$Y=\overline A\;\overline B\;+\;\overline C$$
B
$$Y=\left(A+B\right)C$$
C
$$Y=\left(\overline A+\overline B\right)\overline C$$
D
$$Y=AB+C$$
3
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the threshold voltage VT = 1 V. The voltage Vx at the source of the upper transistor is GATE ECE 2011 Electronic Devices and VLSI - IC Basics and MOSFET Question 61 English
A
1 V
B
2 V
C
3 V
D
3.67 V
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
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Network Theory
Network Elements Network Theorems Transient Response Sinusoidal Steady State Response Two Port Networks Network Graphs State Equations For Networks Miscellaneous
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Basic of Control Systems Signal Flow Graph and Block Diagram Time Response Analysis Stability Root Locus Diagram Frequency Response Analysis Compensators State Space Analysis
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Semiconductor Physics PN Junction BJT and FET IC Basics and MOSFET
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Diodes Bipolar Junction Transistor Frequency Response FET and MOSFET Oscillators Operational Amplifier Feedback Amplifier Power Amplifier 555 Timer
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Pin Details of 8085 and Interfacing with 8085 Instruction Set and Programming with 8085
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