1
GATE ECE 2013
+1
-0.3
In a MOSFET operating in the saturation region, the channel length modulation effect causes
A
an increase in the gate-source capacitance
B
a decrease in the Transconductance
C
a decrease in the unity-gain cutoff frequency
D
a decrease in the output resistance
2
GATE ECE 2012
+1
-0.3
In the circuit shown
A
$$Y=\overline A\;\overline B\;+\;\overline C$$
B
$$Y=\left(A+B\right)C$$
C
$$Y=\left(\overline A+\overline B\right)\overline C$$
D
$$Y=AB+C$$
3
GATE ECE 2011
+1
-0.3
In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the threshold voltage VT = 1 V. The voltage Vx at the source of the upper transistor is
A
1 V
B
2 V
C
3 V
D
3.67 V
4
GATE ECE 2008
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
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