1
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the ac equivalent circuit shown in the figure, if in is the input current and RF is very large, the type of feedback GATE ECE 2014 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 56 English
A
voltage-voltage feedback
B
voltage-current feedback
C
current-voltage feedback
D
current-current feedback
2
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
3
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
A
Isolation oxide growth
B
Channel stop implantation
C
Poly-silicon gate patterning
D
Lithography step leading to the contact pads
4
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
A
superior quality oxide with a higher growth rate
B
inferior quality oxide with a higher growth rate
C
inferior quality oxide with a lower growth rate
D
superior quality oxide with a lower growth rate

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