1
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
A long-channel NMOS transistor is biased in the linear region with VDS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?
A
If the device width W is increased, the resistance decreases.
B
If the threshold voltage is reduced, the resistance decreases.
C
If the device length L is increased, the resistance increases.
D
If VGS is increased, the resistance increases.
2
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):


P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?
A
P and Q
B
P and S
C
Q and R
D
R and S
3
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 49 English
A
0 V
B
$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$
C
Switching threshold of inverter
D
VDD
4
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+1
-0.3
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 46 English
A
inversion
B
accumulation
C
depletion
D
flat band
GATE ECE Subjects
EXAM MAP
Medical
NEETAIIMS
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
Defence
NDA
Staff Selection Commission
SSC CGL Tier I
CBSE
Class 12