1
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
A long-channel NMOS transistor is biased in the linear region with VDS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?
A
If the device width W is increased, the resistance decreases.
B
If the threshold voltage is reduced, the resistance decreases.
C
If the device length L is increased, the resistance increases.
D
If VGS is increased, the resistance increases.
2
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation
3
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
A
a decrease in the threshold voltage
B
channel length modulation
C
an increase in substrate leakage current
D
an increase in accumulation capacitance
4
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
In the ac equivalent circuit shown in the figure, if in is the input current and RF is very large, the type of feedback GATE ECE 2014 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 55 English
A
voltage-voltage feedback
B
voltage-current feedback
C
current-voltage feedback
D
current-current feedback
GATE ECE Subjects
EXAM MAP
Medical
NEETAIIMS
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
Defence
NDA
Staff Selection Commission
SSC CGL Tier I
CBSE
Class 12