1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a
temperature above 1000ºC for further oxidation in dry oxygen. The oxidation
rate
2
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A MOS capacitor made using p-type substrate is in the accumulation mode. The
dominant charge in the channel is due to the presence of
3
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements S1 and S2.
S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate
oxide thickness
S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in
substrate doping concentration.
4
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
The threshold voltage of an n-channel MOSFET can be increased by
Questions Asked from IC Basics and MOSFET (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2017 Set 2 (3)
GATE ECE 2016 Set 3 (1)
GATE ECE 2016 Set 2 (2)
GATE ECE 2016 Set 1 (2)
GATE ECE 2015 Set 3 (1)
GATE ECE 2014 Set 3 (1)
GATE ECE 2014 Set 2 (1)
GATE ECE 2014 Set 1 (3)
GATE ECE 2013 (2)
GATE ECE 2012 (1)
GATE ECE 2011 (1)
GATE ECE 2008 (2)
GATE ECE 2005 (1)
GATE ECE 2004 (1)
GATE ECE 1994 (1)
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Communications
Electromagnetics
General Aptitude