GATE ECE 2020 | PN Junction Question 10 | Electronic Devices and VLSI

GATE ECE 2020

MCQ (Single Correct Answer)

-0.67

A one-sided abrupt $p n$ junction diode has a depletion capacitance $C_D$ of 50 pF at a reverse bias 0.2 V . The plot of $\frac{1}{C_D^2}$ versus the applied voltage $V$ for this diode is a straight line as shown in the figure below. The slope of the plot is $\_\_\_\_$ $\times 10^{20} \mathrm{~F}^{-2} \mathrm{~V}^{-1}$.

GATE ECE 2020 Electronic Devices and VLSI - PN Junction Question 4 English

-1.2

-5.7

-0.4

-3.8

GATE ECE 2017 Set 2

Numerical

-0

For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (J_L) is 2.5 mA/cm² and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal voltage (V$$_T$$) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. V$$_{oc}$$ (in volts) will be ______.

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GATE ECE 2016 Set 2

Numerical

-0

Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $${\mathrm N}_\mathrm d^+=10^{17}\;\mathrm{cm}^{-3}$$. The electric field at x = 0 is 0 V/cm and the electric field at x = L is 50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions at all points. GATE ECE 2016 Set 2 Electronic Devices and VLSI - PN Junction Question 13 English

GATE ECE 2016 Set 2 Electronic Devices and VLSI - PN Junction Question 13 English

Given q = 1.6 × 10⁻¹⁹ coulomb, $$\varepsilon$$₀ = 8.85 × 10⁻¹⁴ F/cm, $$\varepsilon$$_r = 11.7 for silicon, the value of L in nm is ________.

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GATE ECE 2016 Set 3

MCQ (Single Correct Answer)

-0.6

Consider the charge profile shown in the figure. The resultant potential distribution is best described by GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 12 English