GATE ECE 2015 Set 1 | PN Junction Question 7 | Electronic Devices and VLSI

GATE ECE 2015 Set 1

Numerical

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The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (C_J) at a reverse bias (V_R) of 1.25V is 5pF, the value of C_J (in pF) when V_R = 7.25V is ___________.

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GATE ECE 2015 Set 3

MCQ (Single Correct Answer)

-0.6

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE? GATE ECE 2015 Set 3 Electronic Devices and VLSI - PN Junction Question 6 English

GATE ECE 2015 Set 3 Electronic Devices and VLSI - PN Junction Question 6 English

The left side of the junction is n-type and the right side is p-type

Both the n-type and p-type depletion regions are uniformly doped

The potential difference across the depletion region is 700 mV

If the p-type region has a doping concentration of 10¹⁵ cm^–3 , then the doping concentration in the n-type region will be 10¹⁶ cm^–3

GATE ECE 2014 Set 2

Numerical

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Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width X_n on the N-side of the junction is 0.2 µm and the permittivity of silicon (ε_si) is 1.044×10^-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm) is _________. GATE ECE 2014 Set 2 Electronic Devices and VLSI - PN Junction Question 8 English

GATE ECE 2014 Set 2 Electronic Devices and VLSI - PN Junction Question 8 English

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GATE ECE 2013

MCQ (Single Correct Answer)

-0.6

In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5V across R_L, the minimum value of R_L in Ω and the minimum power rating of the Zener diode in mW, respectively, are GATE ECE 2013 Electronic Devices and VLSI - PN Junction Question 9 English