1
GATE ECE 2015 Set 3
+2
-0.6
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?
A
The left side of the junction is n-type and the right side is p-type
B
Both the n-type and p-type depletion regions are uniformly doped
C
The potential difference across the depletion region is 700 mV
D
If the p-type region has a doping concentration of 1015 cm–3 , then the doping concentration in the n-type region will be 1016 cm–3
2
GATE ECE 2015 Set 1
Numerical
+2
-0
The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (CJ) at a reverse bias (VR) of 1.25V is 5pF, the value of CJ (in pF) when VR = 7.25V is ___________.
3
GATE ECE 2014 Set 2
Numerical
+2
-0
Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 µm and the permittivity of silicon (εsi) is 1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm) is _________.
4
GATE ECE 2013
+2
-0.6
In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5V across RL, the minimum value of RL in Ω and the minimum power rating of the Zener diode in mW, respectively, are
A
125 and 125
B
125 and 250
C
250 and 125
D
250 and 250
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