1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is
A
1
B
5
C
4 × 103
D
8 × 103
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.
A
X: reverse, Y: reverse
B
X: reverse, Y: forward
C
X: forward, Y: reverse
D
X: forward, Y: forward
3
GATE ECE 1993
MCQ (More than One Correct Answer)
+2
-0.6
The built-in potential (Diffusion Potential) in a p-n junction
A
is equal to the difference in the Fermi level of the two sides, expressed in volts.
B
increases with the increase in the doping levels of the two sides.
C
increases with the increase in temperature.
D
is equal to the average of the Fermi levels of the two sides.
4
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
The 6 V Zener diode shown in figure has zero Zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is: GATE ECE 1992 Electronic Devices and VLSI - PN Junction Question 16 English
A
1.2 kΩ
B
50 Ω
C
80 Ω
D
0 Ω
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