The photocurrent of a PN junction diode solar cell is 1 mA. The voltage corresponding to its maximum power point is 0.3 V. If the thermal voltage is 30 mV, the reverse saturation current of the diode (in nA, rounded off to two decimal places) is _____.

A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at x = $$\pm$$ 2l_n, where l_n = 10^$$-$$4 cm is the diffusion length of electrons. Assume electronic charge, q = $$-$$1.6 $$\times$$ 10^$$-$$19 C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers (R) are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at x = +2_ln is ___________ mA/cm² (rounded off to two decimal places).

A $p n$ junction solar cell of area $1.0 \mathrm{~cm}^2$, illuminated uniformly with $100 \mathrm{mWcm}^{-2}$; has the following parameter : Efficiency $=15 \%$, open circuit voltage $=0.7 \mathrm{~V}$, fill factor $=0.8$, and thickness $=200 \mu \mathrm{~m}$. The charge of an electron is $1.6 \times 10^{-19} \mathrm{C}$. The average optical generation rate ( $\mathrm{in} \mathrm{cm}^{-3} \mathrm{~s}^{-1}$ ) is

A one-sided abrupt $p n$ junction diode has a depletion capacitance $C_D$ of 50 pF at a reverse bias 0.2 V . The plot of $\frac{1}{C_D^2}$ versus the applied voltage $V$ for this diode is a straight line as shown in the figure below. The slope of the plot is $\_\_\_\_$ $\times 10^{20} \mathrm{~F}^{-2} \mathrm{~V}^{-1}$.