GATE ECE 2016 Set 2 | PN Junction Question 3 | Electronic Devices and VLSI

GATE ECE 2016 Set 2

Numerical

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Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $${\mathrm N}_\mathrm d^+=10^{17}\;\mathrm{cm}^{-3}$$. The electric field at x = 0 is 0 V/cm and the electric field at x = L is 50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions at all points. GATE ECE 2016 Set 2 Electronic Devices and VLSI - PN Junction Question 4 English

GATE ECE 2016 Set 2 Electronic Devices and VLSI - PN Junction Question 4 English

Given q = 1.6 × 10⁻¹⁹ coulomb, $$\varepsilon$$₀ = 8.85 × 10⁻¹⁴ F/cm, $$\varepsilon$$_r = 11.7 for silicon, the value of L in nm is ________.

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GATE ECE 2016 Set 3

MCQ (Single Correct Answer)

-0.6

Consider the charge profile shown in the figure. The resultant potential distribution is best described by GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 3 English

GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 3 English

GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 3 English Option 1

GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 3 English Option 2

GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 3 English Option 3

GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 3 English Option 4

GATE ECE 2015 Set 3

MCQ (Single Correct Answer)

-0.6

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE? GATE ECE 2015 Set 3 Electronic Devices and VLSI - PN Junction Question 5 English

GATE ECE 2015 Set 3 Electronic Devices and VLSI - PN Junction Question 5 English

The left side of the junction is n-type and the right side is p-type

Both the n-type and p-type depletion regions are uniformly doped

The potential difference across the depletion region is 700 mV

If the p-type region has a doping concentration of 10¹⁵ cm^–3 , then the doping concentration in the n-type region will be 10¹⁶ cm^–3

GATE ECE 2015 Set 1

Numerical

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The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (C_J) at a reverse bias (V_R) of 1.25V is 5pF, the value of C_J (in pF) when V_R = 7.25V is ___________.

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