1
GATE ECE 1993
MCQ (More than One Correct Answer)
+2
-0
The built-in potential (Diffusion Potential) in a p-n junction
A
is equal to the difference in the Fermi level of the two sides, expressed in volts.
B
increases with the increase in the doping levels of the two sides.
C
increases with the increase in temperature.
D
is equal to the average of the Fermi levels of the two sides.
2
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
The 6 V Zener diode shown in figure has zero Zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is: GATE ECE 1992 Electronic Devices and VLSI - PN Junction Question 17 English
A
1.2 kΩ
B
50 Ω
C
80 Ω
D
0 Ω
3
GATE ECE 1991
Numerical
+2
-0
Referring to the figure. The switch S is in position 1 initially and steady state conditions exist from time t = 0 to t = t0. At t = t0, the switch is suddenly thrown into position 2. The current I through the 10K resistor as a function of time t, from t = 0 is (in mA) _____________.

(Give the sketch showing the magnitudes of the current at t = 0, t = t0 and t = $$\infty$$ )

GATE ECE 1991 Electronic Devices and VLSI - PN Junction Question 18 English
Your input ____
4
GATE ECE 1991
MCQ (Single Correct Answer)
+2
-0.6
The small signal capacitances of an abrupt P+−N junction is 1 nF at zero bias. If the built-in voltage is 1 volt, the capacitance at a reverse bias voltage of 99 volts is equal to
A
100
B
0.1
C
0.01
D
10
GATE ECE Subjects
EXAM MAP
Medical
NEETAIIMS
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
Defence
NDA
Staff Selection Commission
SSC CGL Tier I
CBSE
Class 12