1
GATE ECE 2014 Set 2
Numerical
+2
-0
Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 µm and the permittivity of silicon (εsi) is 1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm) is _________. GATE ECE 2014 Set 2 Electronic Devices and VLSI - PN Junction Question 8 English
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2
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5V across RL, the minimum value of RL in Ω and the minimum power rating of the Zener diode in mW, respectively, are GATE ECE 2013 Electronic Devices and VLSI - PN Junction Question 9 English
A
125 and 125
B
125 and 250
C
250 and 125
D
250 and 250
3
GATE ECE 2009
MCQ (Single Correct Answer)
+2
-0.6
In the circuit below, the diode is ideal. The voltage V is given by GATE ECE 2009 Electronic Devices and VLSI - PN Junction Question 10 English
A
Min (Vi, 1)
B
Max (Vi, 1)
C
Min (-Vi, 1)
D
Max (-Vi, 1)
4
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
A P+-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:
A
4 µm
B
4.9 µm
C
8 µm
D
12 µm
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