Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width X_n on the N-side of the junction is 0.2 µm and the permittivity of silicon (ε_si) is 1.044×10^-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm) is _________.

In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5V across R_L, the minimum value of R_L in Ω and the minimum power rating of the Zener diode in mW, respectively, are

In the circuit below, the diode is ideal. The voltage V is given by

A P⁺-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be: