For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (J_L) is 2.5 mA/cm² and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal voltage (V$$_T$$) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. V$$_{oc}$$ (in volts) will be ______.

Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $${\mathrm N}_\mathrm d^+=10^{17}\;\mathrm{cm}^{-3}$$. The electric field at x = 0 is 0 V/cm and the electric field at x = L is 50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions at all points.

Given q = 1.6 × 10⁻¹⁹ coulomb, $$\varepsilon$$₀ = 8.85 × 10⁻¹⁴ F/cm, $$\varepsilon$$_r = 11.7 for silicon, the value of L in nm is ________.

Consider the charge profile shown in the figure. The resultant potential distribution is best described by

The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (C_J) at a reverse bias (V_R) of 1.25V is 5pF, the value of C_J (in pF) when V_R = 7.25V is ___________.