1
GATE ECE 2017 Set 2
Numerical
+2
-0
For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal voltage (V$$_T$$) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. V$$_{oc}$$ (in volts) will be ______.
2
GATE ECE 2016 Set 2
Numerical
+2
-0
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $${\mathrm N}_\mathrm d^+=10^{17}\;\mathrm{cm}^{-3}$$. The electric field at x = 0 is 0 V/cm and the electric field at x = L is 50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions at all points.

Given q = 1.6 × 10−19 coulomb, $$\varepsilon$$0 = 8.85 × 10−14 F/cm, $$\varepsilon$$r = 11.7 for silicon, the value of L in nm is ________.

3
GATE ECE 2016 Set 3
+2
-0.6
Consider the charge profile shown in the figure. The resultant potential distribution is best described by
A
B
C
D
4
GATE ECE 2015 Set 3
+2
-0.6
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?
A
The left side of the junction is n-type and the right side is p-type
B
Both the n-type and p-type depletion regions are uniformly doped
C
The potential difference across the depletion region is 700 mV
D
If the p-type region has a doping concentration of 1015 cm–3 , then the doping concentration in the n-type region will be 1016 cm–3
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