A P⁺-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:

The Zener diode in the regulator circuit shown in figure has a Zener voltage of 5.8 Volts and a Zener knee current of 0.5 mA. The maximum load current drawn from this circuit ensuring proper functioning over the input voltage range between 20 and 30 Volts, is

A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛ_r = 11.7 and the permittivity of free space ɛ₀ = 8.854 × 10^-12 F/m.The depletion capacitance of the diode per square meter is

At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is