1
GATE ECE 2022
Numerical
+1
-0.33

A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at x = $$\pm$$ 2ln, where ln = 10$$-$$4 cm is the diffusion length of electrons. Assume electronic charge, q = $$-$$1.6 $$\times$$ 10$$-$$19 C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers (R) are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at x = +2ln is ___________ mA/cm2 (rounded off to two decimal places).

GATE ECE 2022 Electronic Devices and VLSI - PN Junction Question 1 English

Your input ____
2
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
A
Both the P-region and the N-region are heavily doped
B
The N-region is heavily doped compared to the P-region
C
The P-region is heavily doped compared to the N-region
D
An intrinsic silicon region is inserted between the P-region and the N-region
3
GATE ECE 2015 Set 1
Numerical
+1
-0
In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V0 (in volts) is ________. GATE ECE 2015 Set 1 Electronic Devices and VLSI - PN Junction Question 20 English
Your input ____
4
GATE ECE 2014 Set 1
Numerical
+1
-0
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.
Your input ____
GATE ECE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
CBSE
Class 12