A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at x = $$\pm$$ 2l_n, where l_n = 10^$$-$$4 cm is the diffusion length of electrons. Assume electronic charge, q = $$-$$1.6 $$\times$$ 10^$$-$$19 C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers (R) are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at x = +2_ln is ___________ mA/cm² (rounded off to two decimal places).

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V₀ (in volts) is ________.

When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.