1
GATE ECE 2022
Numerical
+1
-0.33
A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at x = $$\pm$$ 2ln, where ln = 10$$-$$4 cm is the diffusion length of electrons. Assume electronic charge, q = $$-$$1.6 $$\times$$ 10$$-$$19 C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers (R) are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at x = +2ln is ___________ mA/cm2 (rounded off to two decimal places).
Your input ____
2
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A region of negative differential resistance is observed in the current voltage characteristics
of a silicon PN junction if
3
GATE ECE 2015 Set 1
Numerical
+1
-0
In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output
voltage V0 (in volts) is ________.
Your input ____
4
GATE ECE 2014 Set 1
Numerical
+1
-0
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W,
the photocurrent generated (in μA) is ________.
Your input ____
Questions Asked from PN Junction (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
Electromagnetics
General Aptitude