1
GATE ECE 2022
Numerical
+2
-0
A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at x = $$\pm$$ 2ln, where ln = 10$$-$$4 cm is the diffusion length of electrons. Assume electronic charge, q = $$-$$1.6 $$\times$$ 10$$-$$19 C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers (R) are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at x = +2ln is ___________ mA/cm2 (rounded off to two decimal places).
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2
GATE ECE 2017 Set 2
Numerical
+2
-0
For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent
density (JL) is 2.5 mA/cm2
and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal
voltage (V$$_T$$) to be 25 mV. If the intensity of the incident light is increased by 20 times,
assuming that the temperature remains unchanged. V$$_{oc}$$ (in volts) will be ______.
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3
GATE ECE 2016 Set 2
Numerical
+2
-0
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of
$${\mathrm N}_\mathrm d^+=10^{17}\;\mathrm{cm}^{-3}$$. The electric field at x = 0 is 0 V/cm and the electric field at x = L is
50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions
at all points.
Given q = 1.6 × 10−19 coulomb, $$\varepsilon$$0 = 8.85 × 10−14 F/cm, $$\varepsilon$$r = 11.7 for silicon, the value of L in nm is ________.
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4
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+2
-0.6
Consider the charge profile shown in the figure. The resultant potential distribution is best
described by
Questions Asked from PN Junction (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2024 (1)
GATE ECE 2022 (1)
GATE ECE 2017 Set 2 (1)
GATE ECE 2016 Set 2 (1)
GATE ECE 2016 Set 3 (1)
GATE ECE 2015 Set 1 (1)
GATE ECE 2015 Set 3 (1)
GATE ECE 2014 Set 2 (1)
GATE ECE 2013 (1)
GATE ECE 2009 (1)
GATE ECE 2007 (1)
GATE ECE 2005 (2)
GATE ECE 2003 (2)
GATE ECE 1993 (1)
GATE ECE 1992 (1)
GATE ECE 1991 (2)
GATE ECE 1987 (1)
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics