A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛ_r = 11.7 and the permittivity of free space ɛ₀ = 8.854 × 10^-12 F/m.The depletion capacitance of the diode per square meter is

At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is

Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.

The built-in potential (Diffusion Potential) in a p-n junction