1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A Silicon PN junction diode under reverse bias has depletion region of width 10
µm. The relative permittivity of Silicon, ɛr = 11.7 and the permittivity of free space ɛ0 = 8.854 × 10-12 F/m.The depletion capacitance of the diode per square meter is
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a
forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias
of 0.718 V. Under the conditions stated above, the closest approximation of the
ratio of reverse saturation current in germanium diode to that in silicon diode is
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
Choose proper substitutes for X and Y to make the following statement correct
Tunnel diode and Avalanche photodiode are operated in X bias and Y bias
respectively.
4
GATE ECE 1993
MCQ (More than One Correct Answer)
+2
-0
The built-in potential (Diffusion Potential) in a p-n junction
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