1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛr = 11.7 and the permittivity of free space ɛ0 = 8.854 × 10-12 F/m.The depletion capacitance of the diode per square meter is
A
100 μF
B
10 μF
C
1 μF
D
20 μF
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.
A
X: reverse, Y: reverse
B
X: reverse, Y: forward
C
X: forward, Y: reverse
D
X: forward, Y: forward
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is
A
1
B
5
C
4 × 103
D
8 × 103
4
GATE ECE 1993
MCQ (More than One Correct Answer)
+2
-0
The built-in potential (Diffusion Potential) in a p-n junction
A
is equal to the difference in the Fermi level of the two sides, expressed in volts.
B
increases with the increase in the doping levels of the two sides.
C
increases with the increase in temperature.
D
is equal to the average of the Fermi levels of the two sides.
GATE ECE Subjects
EXAM MAP