1
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R2 in k$$\Omega $$ to produce Ic = 1mA is GATE ECE 2013 Analog Circuits - Bipolar Junction Transistor Question 23 English
A
20
B
3
C
40
D
50
2
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The voltage gain Av of the circuit shown below is GATE ECE 2012 Analog Circuits - Bipolar Junction Transistor Question 24 English
A
$$\left| {{{\rm A}_v}} \right|\, \approx \,200$$
B
$$\left| {{{\rm A}_v}} \right|\, \approx \,100$$
C
$$\left| {{{\rm A}_v}} \right|\, \approx \,20$$
D
$$\left| {{{\rm A}_v}} \right|\, \approx \,10$$
3
GATE ECE 2011
MCQ (Single Correct Answer)
+2
-0.6
For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current Ico = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in the active region with a base drive current IB = 20$$\mu {\rm A}$$. The collector current Ic for this mode of operation is
A
0.98 mA
B
0.99 mA
C
1.0 mA
D
1.01 mA
4
GATE ECE 2011
MCQ (Single Correct Answer)
+2
-0.6
For the BJT Q1 in the circuit shown below, $$\beta = \infty ,\,\,\,\,{V_{BEon\,}}\, = \,0.7V,\,\,\,{V_{CEsat}}\, = \,0.7V.$$. The switch is initially closed. at time t = 0, the switch is opened. The time t at which q1 leaves the active region is GATE ECE 2011 Analog Circuits - Bipolar Junction Transistor Question 25 English
A
10 ms
B
25 ms
C
50 ms
D
100 ms
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