1
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ? GATE ECE 2014 Set 3 Analog Circuits - Bipolar Junction Transistor Question 20 English
A
For $${R_c}\,\, = \,\,1k\Omega ,$$ the BJT operates in the saturation region.
B
For For $${R_c}\,\, = \,\,3k\Omega ,$$ the BJT operates in the saturation region
C
For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the cut-off region.
D
For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the linear region.
2
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R2 in k$$\Omega $$ to produce Ic = 1mA is GATE ECE 2013 Analog Circuits - Bipolar Junction Transistor Question 27 English
A
20
B
3
C
40
D
50
3
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The voltage gain Av of the circuit shown below is GATE ECE 2012 Analog Circuits - Bipolar Junction Transistor Question 28 English
A
$$\left| {{{\rm A}_v}} \right|\, \approx \,200$$
B
$$\left| {{{\rm A}_v}} \right|\, \approx \,100$$
C
$$\left| {{{\rm A}_v}} \right|\, \approx \,20$$
D
$$\left| {{{\rm A}_v}} \right|\, \approx \,10$$
4
GATE ECE 2011
MCQ (Single Correct Answer)
+2
-0.6
For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current Ico = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in the active region with a base drive current IB = 20$$\mu {\rm A}$$. The collector current Ic for this mode of operation is
A
0.98 mA
B
0.99 mA
C
1.0 mA
D
1.01 mA
GATE ECE Subjects
EXAM MAP