1
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ? GATE ECE 2014 Set 3 Analog Circuits - Bipolar Junction Transistor Question 16 English
A
For $${R_c}\,\, = \,\,1k\Omega ,$$ the BJT operates in the saturation region.
B
For For $${R_c}\,\, = \,\,3k\Omega ,$$ the BJT operates in the saturation region
C
For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the cut-off region.
D
For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the linear region.
2
GATE ECE 2014 Set 1
Numerical
+2
-0
A BJT is baised in forward active mode Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation current Is = 10-13A. The transconductance of the BJT (in mA/V) is
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3
GATE ECE 2014 Set 1
Numerical
+2
-0
For the amplifier shown in the figure, the BJT parameters are VBE = 0.7 V, $$\beta $$ = 200, and thermal voltage VT = 25 mV. The voltage gain (Vo/Vi of the amplifier is ______. GATE ECE 2014 Set 1 Analog Circuits - Bipolar Junction Transistor Question 21 English
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4
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R2 in k$$\Omega $$ to produce Ic = 1mA is GATE ECE 2013 Analog Circuits - Bipolar Junction Transistor Question 23 English
A
20
B
3
C
40
D
50
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