GATE ECE 2014 Set 3 | Bipolar Junction Transistor Question 24 | Analog Circuits

GATE ECE 2014 Set 3

MCQ (Single Correct Answer)

-0.6

In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ? GATE ECE 2014 Set 3 Analog Circuits - Bipolar Junction Transistor Question 24 English

GATE ECE 2014 Set 3 Analog Circuits - Bipolar Junction Transistor Question 24 English

For $${R_c}\,\, = \,\,1k\Omega ,$$ the BJT operates in the saturation region.

For For $${R_c}\,\, = \,\,3k\Omega ,$$ the BJT operates in the saturation region

For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the cut-off region.

For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the linear region.

GATE ECE 2013

MCQ (Single Correct Answer)

-0.6

In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R₂ in k$$\Omega $$ to produce I_c = 1mA is GATE ECE 2013 Analog Circuits - Bipolar Junction Transistor Question 31 English

GATE ECE 2013 Analog Circuits - Bipolar Junction Transistor Question 31 English

GATE ECE 2012

MCQ (Single Correct Answer)

-0.6

The voltage gain A_v of the circuit shown below is GATE ECE 2012 Analog Circuits - Bipolar Junction Transistor Question 32 English

$$\left| {{{\rm A}_v}} \right|\, \approx \,200$$

$$\left| {{{\rm A}_v}} \right|\, \approx \,100$$

$$\left| {{{\rm A}_v}} \right|\, \approx \,20$$

$$\left| {{{\rm A}_v}} \right|\, \approx \,10$$

GATE ECE 2011

MCQ (Single Correct Answer)

-0.6

For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current I_co = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in the active region with a base drive current I_B = 20$$\mu {\rm A}$$. The collector current I_c for this mode of operation is

0.98 mA

0.99 mA

1.0 mA

1.01 mA

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