1
GATE ECE 2006
+2
-0.6
In the transistor amplifier circuit shown in the figure below, the transistor has the following parameters: $${\beta _{DC}}$$ = 60, $${V_{BE}}$$ = 0.7V, $${h_{ie}} \to \,\,\infty$$, $${h_{fe}} \to \,\,\infty$$. The capacitance CC can be assumed to be infinite.

The small-signal gain of the amplifier $${{{V_c}} \over {{V_s}}}$$ is

A
-10
B
-5.3
C
5.3
D
10
2
GATE ECE 2005
+2
-0.6
The circuit using a BJT with β = 50 and VBE = 0.7 V is shown in the figure. The base current IB and collector voltage VC are respectively
A
43 μA and 11.4 Volts
B
40 μA and 16 Volts
C
45 μA and 11 Volts
D
50 μA and 10 Volts
3
GATE ECE 2005
+2
-0.6
For an npn transistor connected as shown in the figure, VBE = 0.7 volts. Given that reverse saturation current of the junction at room temperature $${300^0}$$ K is $${10^{ - 13}}\,{\rm A}$$, the emitter current is $$\left( {\eta \, = \,1} \right)$$
A
30 mA
B
39 mA
C
49 mA
D
20 mA
4
GATE ECE 2004
+2
-0.6
A bipolar transistor is operating in the active region with a collector current of 1mA. Assuming that the 'β' of the transistor is 100 and the transconductance (gm) and the input resistance ($${r_\pi }$$) of the transistor in the common emitter configuration, are
A
gm = 25 mA/V and $${r_\pi }$$ = $$15.6\,\,k\Omega$$
B
gm = 40 mA/V and $${r_\pi }$$ = $$4.0\,\,k\Omega$$
C
gm = 25 mA/V and $${r_\pi }$$ = $$2.5\,\,k\Omega$$
D
gm = 40 mA/V and $${r_\pi }$$ = $$2.5\,\,k\Omega$$
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