In the transistor amplifier circuit shown in the figure below, the transistor has the following parameters: $${\beta _{DC}}$$ = 60, $${V_{BE}}$$ = 0.7V, $${h_{ie}} \to \,\,\infty $$, $${h_{fe}} \to \,\,\infty $$. The capacitance C_C can be assumed to be infinite.

The small-signal gain of the amplifier $${{{V_c}} \over {{V_s}}}$$ is

The circuit using a BJT with β = 50 and V_BE = 0.7 V is shown in the figure. The base current I_B and collector voltage V_C are respectively

For an npn transistor connected as shown in the figure, V_BE = 0.7 volts. Given that reverse saturation current of the junction at room temperature $${300^0}$$ K is $${10^{ - 13}}\,{\rm A}$$, the emitter current is $$\left( {\eta \, = \,1} \right)$$

A bipolar transistor is operating in the active region with a collector current of 1mA. Assuming that the 'β' of the transistor is 100 and the transconductance (g_m) and the input resistance ($${r_\pi }$$) of the transistor in the common emitter configuration, are