1
GATE ECE 1990
MCQ (Single Correct Answer)
+2
-0.6
For good stabilized biasing of the transistor of the CE Amplifier of fig, we should have
2
GATE ECE 1989
MCQ (Single Correct Answer)
+2
-0.6
Of the four biasing circuits shown in Fig. For a BJT, indicate the one which can have maximum bias stability:
A
B
C
D
3
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
Each transistor in the Darlington pair (see Fig. below) has hfe = 100. The overall hfe of the composite transistor neglecting the leakage current is
4
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
The quiescent collector current Ic, of a transistor is increased by changing resistance. As a result
Questions Asked from Bipolar Junction Transistor (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2024 (1)
GATE ECE 2017 Set 2 (1)
GATE ECE 2017 Set 1 (2)
GATE ECE 2015 Set 2 (1)
GATE ECE 2015 Set 1 (1)
GATE ECE 2014 Set 1 (2)
GATE ECE 2014 Set 4 (3)
GATE ECE 2014 Set 3 (1)
GATE ECE 2013 (1)
GATE ECE 2012 (1)
GATE ECE 2011 (2)
GATE ECE 2009 (1)
GATE ECE 2008 (2)
GATE ECE 2007 (2)
GATE ECE 2006 (3)
GATE ECE 2005 (2)
GATE ECE 2004 (1)
GATE ECE 2003 (2)
GATE ECE 2000 (1)
GATE ECE 1996 (2)
GATE ECE 1992 (1)
GATE ECE 1991 (1)
GATE ECE 1990 (2)
GATE ECE 1989 (1)
GATE ECE 1988 (4)
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
Electromagnetics
General Aptitude