1
GATE ECE 1990
MCQ (Single Correct Answer)
+2
-0.6
For good stabilized biasing of the transistor of the CE Amplifier of fig, we should have GATE ECE 1990 Analog Circuits - Bipolar Junction Transistor Question 25 English
A
$${{{R_E}} \over {{R_B}}} < < 1$$
B
$${{{R_E}} \over {{R_B}}} > > 1$$
C
$${{{R_e}} \over {{R_B}}} < < {h_{FE}}$$
D
$${{{R_E}} \over {{R_B}}} > > {h_{FE}}$$
2
GATE ECE 1989
MCQ (Single Correct Answer)
+2
-0.6
Of the four biasing circuits shown in Fig. For a BJT, indicate the one which can have maximum bias stability:
A
GATE ECE 1989 Analog Circuits - Bipolar Junction Transistor Question 9 English Option 1
B
GATE ECE 1989 Analog Circuits - Bipolar Junction Transistor Question 9 English Option 2
C
GATE ECE 1989 Analog Circuits - Bipolar Junction Transistor Question 9 English Option 3
D
GATE ECE 1989 Analog Circuits - Bipolar Junction Transistor Question 9 English Option 4
3
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
The amplifier circuit shown below uses a compostie transistor of a MOSFET and BIPOLAR in cascade. ALL capacitance are large. gm of the MOSFET = 2 mA/V , and hfe of the BIPOLAR = 99. The overall Transconductance gm of the composite transistor is GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 28 English
A
198 mA/V.
B
9.9 mA/V.
C
4.95 mA/V.
D
1.98 mA/V.
4
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
Each transistor in the Darlington pair (see Fig. below) has hfe = 100. The overall hfe of the composite transistor neglecting the leakage current is GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 53 English
A
1000
B
10001
C
10100
D
10200

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