1
GATE ECE 1990
MCQ (Single Correct Answer)
+2
-0.6
For good stabilized biasing of the transistor of the CE Amplifier of fig, we should have
2
GATE ECE 1989
MCQ (Single Correct Answer)
+2
-0.6
Of the four biasing circuits shown in Fig. For a BJT, indicate the one which can have maximum bias stability:
3
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
Each transistor in the Darlington pair (see Fig. below) has hfe = 100. The overall hfe of the composite transistor neglecting the leakage current is
4
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
The quiescent collector current Ic, of a transistor is increased by changing resistance. As a result
Questions Asked from Bipolar Junction Transistor (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE 2017 Set 2 (1)
GATE ECE 2017 Set 1 (2)
GATE ECE 2015 Set 2 (1)
GATE ECE 2015 Set 1 (1)
GATE ECE 2014 Set 4 (3)
GATE ECE 2014 Set 3 (1)
GATE ECE 2014 Set 1 (2)
GATE ECE 2013 (1)
GATE ECE 2012 (1)
GATE ECE 2011 (2)
GATE ECE 2009 (1)
GATE ECE 2008 (2)
GATE ECE 2007 (2)
GATE ECE 2006 (3)
GATE ECE 2005 (2)
GATE ECE 2004 (1)
GATE ECE 2003 (2)
GATE ECE 2000 (1)
GATE ECE 1996 (2)
GATE ECE 1992 (1)
GATE ECE 1991 (1)
GATE ECE 1990 (2)
GATE ECE 1989 (1)
GATE ECE 1988 (4)
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series
Discrete Time Signal Fourier Series Fourier Transform
Discrete Time Signal Z Transform
Continuous Time Linear Invariant System
Transmission of Signal Through Continuous Time LTI Systems
Discrete Time Linear Time Invariant Systems
Sampling
Continuous Time Signal Laplace Transform
Discrete Fourier Transform and Fast Fourier Transform
Transmission of Signal Through Discrete Time Lti Systems
Miscellaneous
Fourier Transform
Communications
Electromagnetics
General Aptitude