1
GATE ECE 2014 Set 1
Numerical
+2
-0
For the amplifier shown in the figure, the BJT parameters are VBE = 0.7 V, $$\beta$$ = 200, and thermal voltage VT = 25 mV. The voltage gain (Vo/Vi of the amplifier is ______. 2
GATE ECE 2013
+2
-0.6
In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta$$. The required value of R2 in k$$\Omega$$ to produce Ic = 1mA is A
20
B
3
C
40
D
50
3
GATE ECE 2012
+2
-0.6
The voltage gain Av of the circuit shown below is A
$$\left| {{{\rm A}_v}} \right|\, \approx \,200$$
B
$$\left| {{{\rm A}_v}} \right|\, \approx \,100$$
C
$$\left| {{{\rm A}_v}} \right|\, \approx \,20$$
D
$$\left| {{{\rm A}_v}} \right|\, \approx \,10$$
4
GATE ECE 2011
+2
-0.6
For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current Ico = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in the active region with a base drive current IB = 20$$\mu {\rm A}$$. The collector current Ic for this mode of operation is
A
0.98 mA
B
0.99 mA
C
1.0 mA
D
1.01 mA
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics
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