For the amplifier shown in the figure, the BJT parameters are V_BE = 0.7 V, $$\beta $$ = 200, and thermal voltage V_T = 25 mV. The voltage gain (V_o/V_i of the amplifier is ______.

In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R₂ in k$$\Omega $$ to produce I_c = 1mA is

The voltage gain A_v of the circuit shown below is

For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current I_co = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in the active region with a base drive current I_B = 20$$\mu {\rm A}$$. The collector current I_c for this mode of operation is