1
GATE ECE 2012
+2
-0.6
The voltage gain Av of the circuit shown below is
A
$$\left| {{{\rm A}_v}} \right|\, \approx \,200$$
B
$$\left| {{{\rm A}_v}} \right|\, \approx \,100$$
C
$$\left| {{{\rm A}_v}} \right|\, \approx \,20$$
D
$$\left| {{{\rm A}_v}} \right|\, \approx \,10$$
2
GATE ECE 2011
+2
-0.6
For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current Ico = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in the active region with a base drive current IB = 20$$\mu {\rm A}$$. The collector current Ic for this mode of operation is
A
0.98 mA
B
0.99 mA
C
1.0 mA
D
1.01 mA
3
GATE ECE 2011
+2
-0.6
For the BJT Q1 in the circuit shown below, $$\beta = \infty ,\,\,\,\,{V_{BEon\,}}\, = \,0.7V,\,\,\,{V_{CEsat}}\, = \,0.7V.$$. The switch is initially closed. at time t = 0, the switch is opened. The time t at which q1 leaves the active region is
A
10 ms
B
25 ms
C
50 ms
D
100 ms
4
GATE ECE 2009
+2
-0.6
A small signal source Vi(t) = A cos 20t + B sin 106 t, is applied to a transistor Amplifier as shown in fig. The transistor has $$\beta$$ = 150 and hie = 3k$$\Omega$$ , which expression best approximates $${V_0}\left( t \right)$$ ?
A
$$V_o\left( t \right)\,\, = \, - 1500\,\left( {{\rm A}\,\cos 20t\, + b\sin \,{{10}^6}t} \right)$$
B
$${V_o}\,\left( t \right)\,\, = \, - 1500\,\left( {{\rm A}\,\cos 20t\, + b\sin \,{{10}^6}t} \right)$$
C
$${V_o}\left( t \right)\,\, = \, - 1500\,B\sin \,{10^6}t$$
D
$${V_o}\left( t \right)\,\, = \, - 150\,B\sin \,{10^6}t$$
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